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BLF573S
HF / VHF power LDMOS transistor
Rev. 01 -- 8 December 2008 Preliminary data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
Table 1. Production test information f (MHz) CW 225 VDS (V) 50 PL (W) 300 Gp (dB) 26.5 D (%) 70
Mode of operation
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: N Average output power = 300 W N Power gain = 26.5 dB N Efficiency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (HF and VHF band) I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
I Industrial, scientific and medical applications I Broadcast transmitter applications
NXP Semiconductors
BLF573S
HF / VHF power LDMOS transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Graphic symbol
1
2 3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name BLF573S Description earless flanged LDMOST ceramic package, 2 leads Version SOT502B Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 110 +11 42 +150 225 Unit V V A C C
5. Thermal characteristics
Table 5. Symbol Rth(j-c)
[1]
Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = 300 W
[1]
Typ 0.21
Unit K/W
Rth(j-c) is measured under RF conditions.
BLF573S_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
2 of 14
NXP Semiconductors
BLF573S
HF / VHF power LDMOS transistor
6. Characteristics
Table 6. DC characteristics Tj = 25 C unless otherwise specified Symbol Parameter VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs Ciss Coss gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance input capacitance output capacitance Conditions VDS = 10 V; ID = 375 mA VDS = 50 V; ID = 900 mA VGS = 0 V; VDS = 50 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 18.75 A VGS = VGS(th) + 3.75 V; ID = 12.49 A VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz Min 110 1.25 1.45 44 Typ 1.7 1.95 56 20 0.09 2.3 300 103 Max 2.25 2.45 4.2 420 Unit V V V A A nA S pF pF pF V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.75 mA
Table 7. RF characteristics Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 900 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit Symbol Parameter Gp RLin D power gain input return loss drain efficiency Conditions PL = 300 W PL = 300 W PL = 300 W Min 25 10 67 Typ 26.5 13 70 Max 28 Unit dB dB %
BLF573S_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
3 of 14
NXP Semiconductors
BLF573S
HF / VHF power LDMOS transistor
800 Coss (pF) 600
001aaj141
400
200
0 0 10 20 30 40 50 VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; capacitance value without internal matching
6.1 Ruggedness in class-AB operation
The BLF573S is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 900 mA; PL = 300 W; f = 225 MHz.
7. Application information
7.1 Impedance information
Table 8. Typical impedance Measured ZS and ZL test circuit impedances. f MHz 225 ZS 0.7 + j2.0 ZL 1.95 + j2.0
drain ZL gate ZS
001aaf059
Fig 2.
Definition of transistor impedance
BLF573S_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
4 of 14
NXP Semiconductors
BLF573S
HF / VHF power LDMOS transistor
7.2 Reliability
105 Years
(1) (2) (3) (4) (5) (6)
001aaj142
104
103
102
10
(7) (8) (9) (10) (11)
1 0 4 8 12 16 Idc (A) 20
TTF (0.1 % failure fraction). (1) Tj = 100 C (2) Tj = 110 C (3) Tj = 120 C (4) Tj = 130 C (5) Tj = 140 C (6) Tj = 150 C (7) Tj = 160 C (8) Tj = 170 C (9) Tj = 180 C (10) Tj = 190 C (11) Tj = 200 C
Fig 3.
BLF573S electromigration (ID, total device)
BLF573S_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
5 of 14
NXP Semiconductors
BLF573S
HF / VHF power LDMOS transistor
8. Test information
8.1 RF Performance
The following figures are measured in a class-AB production test circuit.
8.1.1 1-Tone CW
001aaj143 001aaj144
30 Gp (dB) 28 D
80 D (%) 60
30 Gp (dB) 28
(7) (6) (5)
Gp 26 40 26
(1) (2) (3) (4)
24
20
24
22 0 100 200 300 PL (W)
0 400
22 0 100 200 300 PL (W) 400
VDS = 50 V; IDq = 900 mA; f = 225 MHz.
VDS = 50 V; f = 225 MHz. (1) IDq = 500 mA (2) IDq = 700 mA (3) IDq = 900 mA (4) IDq = 1100 mA (5) IDq = 1300 mA (6) IDq = 1500 mA (7) IDq = 1700 mA
Fig 4.
Power gain and drain efficiency as functions of load power; typical values
Fig 5.
Power gain as function of load power; typical values
BLF573S_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
6 of 14
NXP Semiconductors
BLF573S
HF / VHF power LDMOS transistor
60 PL (dBm) 58 ideal PL
001aaj145
(2)
56
(1)
PL 54
52
50 24 26 28 30 32 34 Pi (dBm)
VDS = 50 V; IDq = 900 mA; f = 225 MHz. (1) PL(1dB) = 55.2 dBm (331 W) (2) PL(3dB) = 55.8 dBm (380 W)
Fig 6.
Load power as function of input power; typical values
BLF573S_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
7 of 14
NXP Semiconductors
BLF573S
HF / VHF power LDMOS transistor
8.1.2 2-Tone CW
001aaj146 001aaj147
30 Gp (dB) 28
80 D (%) 60
0 IMD3 (dBc) -20
D
26
Gp
40
-40
24
20
-60
(1) (2) (3) (4) (5) (6) (7) (8)
22 0 100 200 300
0 400 500 PL(PEP) (W)
-80 0 100 200 300 400 500 PL(PEP) (W)
VDS = 50 V; IDq = 900 mA; f1 = 224.95 MHz; f2 = 225.05 MHz.
VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz. (1) IDq = 500 mA (2) IDq = 700 mA (3) IDq = 900 mA (4) IDq = 1100 mA (5) IDq = 1300 mA (6) IDq = 1500 mA (7) IDq = 1700 mA (8) IDq = 1800 mA
Fig 7.
Power gain and drain efficiency as functions of peak envelope load power; typical values
Fig 8.
Third order intermodulation distortion as a function of peak envelope load power; typical values
8.2 Test circuit
Table 9. List of components For production test circuit, see Figure 9 and Figure 10. Printed-Circuit Board (PCB): Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. Component B1 C1, C18 C2 C3, C4 C5, C6, C7 C8, C20 C9 C10 C14
BLF573S_1
Description ferrite SMD bead multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor
Value 100 ; 100 MHz 100 pF 39 pF 180 pF 220 pF 1 nF 4.7 F 30 pF 51 pF 43 pF
[1] [1] [1] [1] [1] [1] [1] [1]
Remarks Ferroxcube BDS3/3/8.9-4S2 or equivalent
TDK C4532X7R1E475MT020U or equivalent
C11, C12, C13 multilayer ceramic chip capacitor
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
8 of 14
NXP Semiconductors
BLF573S
HF / VHF power LDMOS transistor
Table 9. List of components ...continued For production test circuit, see Figure 9 and Figure 10. Printed-Circuit Board (PCB): Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. Component C15 C16 C17 C19 L1 Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor 2 turns enamelled copper wire Value 33 pF 36 pF 16 pF 220 F; 63 V D = 3 mm; d = 1 mm; length = 2 mm; leads = 2 x 6 mm D = 2 mm; d = 1 mm; length = 13 mm; leads = 2 x 5 mm 100 ; 0.6 W (L x W) 96 mm x 3 mm (L x W) 15 mm x 8 mm (L x W) 105 mm x 6 mm (L x W) 3 mm x 6 mm (L x W) 12 mm x 6 mm
[1] [1] [1]
Remarks
L2
4 turns enamelled copper wire
L3 L4, L5 L6 L7 L8 R1
[1]
stripline stripline stripline stripline stripline metal film resistor
American Technical Ceramics type 100B or capacitor of same quality.
VDD
C19
VGG
C9 B1 C8 C20
R1
L1 C13 C14 L7 L8 C18
input 50 C1
C3 L3
C7 L4 L5 L6 C10 C11 C12 C15 L2
output 50
C2
C4 C5 C6
C16
C17
001aaj148
Fig 9.
Class-AB common-source production test circuit
BLF573S_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
9 of 14
NXP Semiconductors
BLF573S
HF / VHF power LDMOS transistor
B1
C19 C9 C8 C20
C3 C1 C2 C4 C5
C7
C13 C14 R1 L1
L2 C18
C6 C11 C12 C10 C15
C17 C16
001aaj149
Fig 10. Component layout for class-AB production test circuit
BLF573S_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
10 of 14
NXP Semiconductors
BLF573S
HF / VHF power LDMOS transistor
9. Package outline
Earless flanged LDMOST ceramic package; 2 leads SOT502B
D
A F
3
D1 D
U1
c
L
1
H
U2
E1
E
2
b w2 M D M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.067 0.815 0.057 0.805
0.390 0.010 0.380
OUTLINE VERSION SOT502B
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 03-01-10 07-05-09
Fig 11. Package outline SOT502B
BLF573S_1 (c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
11 of 14
NXP Semiconductors
BLF573S
HF / VHF power LDMOS transistor
10. Abbreviations
Table 10. Acronym CW EDGE GSM HF LDMOS LDMOST RF SMD TTF VHF VSWR Abbreviations Description Continuous Wave Enhanced Data rates for GSM Evolution Global System for Mobile communications High Frequency Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Surface Mount Device Time To Failure Very High Frequency Voltage Standing-Wave Ratio
11. Revision history
Table 11. Revision history Release date 20081208 Data sheet status Preliminary data sheet Change notice Supersedes Document ID BLF573S_1
BLF573S_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
12 of 14
NXP Semiconductors
BLF573S
HF / VHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF573S_1
(c) NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 -- 8 December 2008
13 of 14
NXP Semiconductors
BLF573S
HF / VHF power LDMOS transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 8.1 8.1.1 8.1.2 8.2 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 RF Performance . . . . . . . . . . . . . . . . . . . . . . . . 6 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 8 December 2008 Document identifier: BLF573S_1

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